Infineon BSC883N03LSGATMA1

Name: Infineon BSC883N03LSGATMA1
Brand: Infineon
SKU: BSC883N03LSGATMA1

Transistor MOSFET N-CH 34V 98A 8-Pin TDSON Tube

$ 0.346

Obsolete

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Rochester Electronics		BSC883N03LSGATMA1	48,286					0.417	0.346	0.308	23m
Component Stockers USA		BSC883N03LSG	627			99.990	99.990	99.990	99.990	99.990	>1wk
Win Source	2	WS-BSC883N03LSGATMA1	170,000	30				1.538	1.290	1.290	1h
Worldway Electronics	2	BSC883N03LSGATMA1	9,820	7	Tape & Reel		0.366	0.360	0.346	0.339	1d
UnikeyIC		BSC883N03LSGATMA1	46,169	398	Cut Tape				0.291	0.291	42m

数据表和文档

下载 Infineon BSC883N03LSGATMA1 的数据表和制造商文档。

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Datasheet10 页13 年前

IHS

库存历史记录

3 个月趋势:

+0.00%

供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2008-10-21

Lifecycle StatusObsolete (Last Updated: 5 months ago)

LTB Date2022-09-30

LTD Date2023-03-31

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描述

由其分销商提供的 Infineon BSC883N03LSGATMA1 的描述。

Transistor MOSFET N-CH 34V 98A 8-Pin TDSON Tube

Avnet Japan

2.5W(Ta),57W(Tc) 20V 2.2V@ 250¦ÌA 34nC@ 10 V 1N 34V 3.8m¦¸@ 30A,10V 17A,98A 2.8nF@15V TDSON-8-1

Unikeyic (ICkey)

Trans MOSFET N-CH 34V 17A 8-Pin TDSON EP T/R

Verical

Power Field-Effect Transistor, 17A I(D), 34V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

BSC883N03 POWER FIELD-EFFECT TRANSISTOR;

Farnell

Mosfet, N-Ch, 34V, 98A, Pg-Tdson-8; Transistor Polarity:N Channel; Continuous Drain Current Id:98A; Drain Source Voltage Vds:34V; On Resistance Rds(On):0.0032Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power Rohs Compliant: Yes |Infineon BSC883N03LSGATMA1

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