价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | IRF8734PBF | 604 | 20h | |||||||||
| RS (Formerly Allied Electronics) | IRF8734PBF | 0 | 3800 | Bulk | 12h | |||||||
| Farnell | IRF8734PBF | 0 | 1 | 6h | ||||||||
| Worldway Electronics | IRF8734PBF | 8,936 | 7 | Tube | 20h | |||||||
| Win Source | WS-IRF8734PBF | 20 | 21h |
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-02-12
Lifecycle StatusObsolete (Last Updated: 4 months ago)
相关零件
InfineonIRF7862PBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 3.7Milliohms;ID 21A;SO-8;PD 2.5W;VGS +/-20V
InfineonIRF8252PBF
2.5W(Ta) 20V 2.35V@ 100¦ÌA 53nC@ 4.5 V 1N 25V 2.7m¦¸@ 25A,10V 25A 5.305nF@13V SOIC-8
描述
由其分销商提供的 Infineon IRF8734PBF 的描述。
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
Infineon SCT
Trans MOSFET N-CH 30V 21A 8-Pin SOIC
MOSFET Operating temperature: -55...150 °C Housing type: SO-8 Polarity: N Power dissipation: 2.5 W
MOSFET, 30V, 21A, 3.5 MOHM, 20 NC QG, SO-8
Benefits: RoHS Compliant | Target Applications: Battery Protection; Load Switch High Side; Load Switch Low Side
Power Field-Effect Transistor, 21A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
IRF8734 - 20V-100V N-CHANNEL SMALL POWER;
MOSFET, 30V, 21A, SOIC; Continuous Drain; MOSFET, 30V, 21A, SOIC; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):5.1mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.5W
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)21 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance3.5 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.175 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.8 V
Number of Channels1
Number of Elements1
On-State Resistance3.5 mΩ
Package Quantity3800
Power Dissipation2.5 W
Rds On Max3.5 mΩ
Recovery Time30 ns
Rise Time16 ns
Turn-Off Delay Time15 ns
Turn-On Delay Time13 ns
Dimensions
Height1.75 mm
Length5 mm
Width4 mm