Infineon BSC340N08NS3GATMA1

Name: Infineon BSC340N08NS3GATMA1
Brand: Infineon
SKU: BSC340N08NS3GATMA1

MOSFET, N-CH, 80V, 23A, 8TDSON; Transistor Polarity: N Channel; Continuous Drain

$ 0.347

Production

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Avnet	2	BSC340N08NS3GATMA1	5,000	5K						0.250	4h
Newark	2	BSC340N08NS3GATMA1	28,633	1	Cut Tape	0.206	0.206	0.206	0.206	0.206
Future Electronics	3	BSC340N08NS3GATMA1	125,000	5K	Tape & Reel					0.300
Rochester Electronics		BSC340N08NS3GATMA1	60,000					0.388	0.322	0.287	1h
Arrow Electronics	4	BSC340N08NS3GATMA1	18,361	1		0.615	0.585	0.442	0.342	0.269

数据表和文档

下载 Infineon BSC340N08NS3GATMA1 的数据表和制造商文档。

IHS

Datasheet9 页15 年前

iiiC

库存历史记录

3 个月趋势:

+13.89%

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供应链

Country of OriginAustria, Mainland China, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2008-07-03

Lifecycle StatusProduction (Last Updated: 1 month ago)

描述

由其分销商提供的 Infineon BSC340N08NS3GATMA1 的描述。

MOSFET, N-CH, 80V, 23A, 8TDSON; Transistor Polarity:N Channel; Continuous Drain

Newark

Trans MOSFET N-CH 80V 7A Automotive 8-Pin TDSON EP T/R / MOSFET N-CH 80V 23A TDSON-8

Win Source

OPTIMOS 3 POWER-TRANSISTOR Power Field-Effect Transistor, 23A I(D), 80V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

ComSIT Distribution GmbH

OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle).

Infineon

MOSFET, N-CH, 80V, 23A, 8TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:23A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0275ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.8V; Power Dissipation Pd:32W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SuperSOT; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C

Farnell