Infineon BSC050NE2LSATMA1

Name: Infineon BSC050NE2LSATMA1
Brand: Infineon
SKU: BSC050NE2LSATMA1

Power MOSFET, N Channel, 25 V, 58 A, 0.0042 ohm, TDSON, Surface Mount

$ 0.273

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Distributor		SKU		Min	Pkg
Avnet	2	47Y7994	81	1		0.917	0.645	0.435	0.336	0.336	1d
Newark		BSC050NE2LSATMA1	81	1	Cut Tape	0.917	0.645	0.435	0.277	0.277
Arrow Electronics	2	BSC050NE2LSATMA1	3,860	1		0.321	0.321	0.321	0.321	0.321
Rochester Electronics		BSC050NE2LSATMA1	3,905					0.285	0.237	0.211	19m
DigiKey	3	BSC050NE2LSATMA1CT-ND	17,866	1	Cut Tape	1.110	0.691	0.451	0.315	0.287

数据表和文档

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IHS

Datasheet10 页13 年前

Factory Futures

Farnell

库存历史记录

3 个月趋势:

+52.16%

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供应链

Country of OriginAustria, Mainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2010-02-24

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 Infineon BSC050NE2LSATMA1 的描述。

Power MOSFET, N Channel, 25 V, 58 A, 0.0042 ohm, TDSON, Surface Mount

Avnet

MOSFET, N CH, 25V, 58A, TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:58A; Source Voltage Vds:25V; On Resistance

element14 APAC

With the OptiMOS™ 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. Available in halfbridge configuration (power stage 5x6).

Infineon

MOSFET, N CH, 25V, 58A, TDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 58A; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 0.0042ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 28W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

Farnell