Infineon BSC009NE2LSATMA1

Name: Infineon BSC009NE2LSATMA1
Brand: Infineon
SKU: BSC009NE2LSATMA1

2.5W 20V 2.2V 72NC@ 4.5V, 126NC@ 10V 1N 25V 900¦Ì¦¸@ 10V 5.8NF@ 12V , 5.15MM*5.9MM*1MM

$ 0.665

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Distributor		SKU		Min	Pkg
Newark		BSC009NE2LSATMA1	9,397	1	Cut Tape	2.670	1.700	1.150	0.840	0.840
DigiKey	2	BSC009NE2LSATMA1CT-ND	4,963	1	Cut Tape	2.560	1.638	1.108	0.808	0.746
RS (Formerly Allied Electronics)		BSC009NE2LS	10	1	Bulk	0.310	0.310	0.310	0.310	0.310	3h
Arrow Electronics		BSC009NE2LSATMA1	3,660	1		1.813	1.240	0.874	0.635	0.629
Avnet		BSC009NE2LSATMA1	0	5K						0.529	18h

数据表和文档

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Newark

Datasheet10 页13 年前

Factory Futures

库存历史记录

3 个月趋势:

+25.32%

CAD 模型

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供应链

Country of OriginAustria, Mainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2011-10-06

Lifecycle StatusProduction (Last Updated: 1 month ago)

描述

由其分销商提供的 Infineon BSC009NE2LSATMA1 的描述。

2.5W 20V 2.2V 72nC@ 4.5V,126nC@ 10V 1N 25V 900¦Ì¦¸@ 10V 5.8nF@ 12V , 5.15mm*5.9mm*1mm

Unikeyic (ICkey)

With the new OptiMOS™ 25V product family, Infineon sets new standards in power density and Energy Efficiency for discrete power MOSFETs. Lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of battery management, or-ing, e-fuse and Hot-swap application. Super-SO8 package has a standard footprint that allows thinner and smaller application solutions compared to the IPB009N03LS.

Infineon

Channel Type:N Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:100A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.2V; Power Dissipation:2.5W; No. Of Pins:8Pins Rohs Compliant: Yes |Infineon BSC009NE2LSATMA1.

Newark