供应链
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-12-30
Lifecycle StatusObsolete (Last Updated: 3 days ago)
LTB Date2021-08-01
LTD Date2022-02-01
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
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描述
由其分销商提供的 onsemi FDMS7570S 的描述。
Trans MOSFET N-CH 25V 30A 8-Pin Power 56 T/R
Power Field-Effect Transistor, 28A I(D), 25V, 0.00195ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
2.5W(Ta)，83W(Tc) 20V 3V@1mA 69nC@ 10V 1individualNChannel 25V 1.95mΩ@ 28A,10V 28A，49A 4.515nF@13V QFN SMD mount 6mm*5mm*1.1mm
MOSFET, N CH, 25V, 49A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0016ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:83W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
The FDMS7570S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight90 mg
Technical
Continuous Drain Current (ID)28 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance1.95 mΩ
Drain to Source Voltage (Vdss)25 V
Element ConfigurationSingle
Fall Time4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.515 nF
Max Operating Temperature150 °C
Max Power Dissipation83 W
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Nominal Vgs1.7 V
Number of Elements1
PackagingTape and Reel
Power Dissipation2.5 W
Rds On Max1.95 mΩ
Rise Time5.9 ns
Schedule B8541290080
Turn-Off Delay Time34 ns
Turn-On Delay Time14 ns
Dimensions
Height1.05 mm
Length5 mm
Width6 mm