备用零件
Price @ 1000
$ 23.55
$ 1.47
$ 1.47
Stock
86,586
823,035
823,035
Authorized Distributors
1
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
100 V
100 V
100 V
Continuous Drain Current (ID)
180 A
180 A
180 A
Threshold Voltage
-
-
-
Rds On Max
4.3 mΩ
4.3 mΩ
4.3 mΩ
Gate to Source Voltage (Vgs)
16 V
16 V
16 V
Power Dissipation
370 W
370 W
370 W
Input Capacitance
11.36 nF
11.36 nF
11.36 nF
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-08-17
Lifecycle StatusObsolete (Last Updated: 5 months ago)
相关零件
InfineonIRFS7734TRLPBF
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
STMicroelectronicsSTH180N10F3-2
N-channel 100 V, 3.9 mOhm typ., 180 A STripFET F3 Power MOSFET in H2PAK-2 package
STMicroelectronicsSTH310N10F7-2
N-channel 100 V, 1.9 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-2 package
STMicroelectronicsSTH315N10F7-2
Automotive-grade N-channel 100 V, 2.1 mOhm typ., 180 A STripFET F7 Power MOSFET
描述
由其分销商提供的 Infineon AUIRLS4030 的描述。
MOSFET N-CH 100V 180A D2PAK / N-Channel 100 V 180A (Tc) 370W (Tc) Surface Mount PG-TO263-3
Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET N-CH 100V 180A Automotive 3-Pin(2+Tab) D2PAK Tube
Transistor MOSFET N-ch 100V 130A D2PAK
AUTOMOTIVE GRADE HEXFET POWER MOSFET Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N-CH, 100V, 180A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0034ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:370W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified | Target Applications: Exhaust
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageD2PAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)180 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance4.3 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time170 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance11.36 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation370 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance4.3 mΩ
Package Quantity1000
Power Dissipation370 W
Rds On Max4.3 mΩ
Rise Time330 ns
Turn-Off Delay Time110 ns
Turn-On Delay Time74 ns
Dimensions
Height5.084 mm
Length10.67 mm
Width9.65 mm