Infineon IRF100S201

Name: Infineon IRF100S201
Brand: Infineon
SKU: IRF100S201

100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Obsolete

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价格与库存

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Distributor		SKU		Min	Pkg
Farnell	2	IRF100S201	0	1	Cut Tape	6.769*	4.142*	4.142*	4.142*	4.142*	11h
Component Stockers USA		IRF100S201	19,825			2.060	1.780	1.510	1.300	1.820	6d
Win Source		WS-IRF100S201	9,195	11				3.059	3.059	3.059	13h
Worldway Electronics		IRF100S201	10,201	7	Tape & Reel		1.996	1.901	1.901	1.901	13h
GreenTree Electronics		IRF100S201	800								9h

数据表和文档

下载 Infineon IRF100S201 的数据表和制造商文档。

TME

Datasheet13 页11 年前

IHS

库存历史记录

3 个月趋势:

-52.35%

CAD 模型

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来源	eCAD	mCAD	文件
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SnapEDA		3D	下载

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2015-03-26

Lifecycle StatusObsolete (Last Updated: 4 months ago)

描述

由其分销商提供的 Infineon IRF100S201 的描述。

100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Infineon SCT

Single N-Channel 100 V 4.2 mOhm 170 nC HEXFET® Power Mosfet - D2PAK

Future Electronics

Trans MOSFET N-CH 100V 192A 3-Pin(2+Tab) D2PAK T/R

Verical

Transistor MOSFET N-CH 100V 192A 3-Pin TO-263AB T/R

Avnet

Power Field-Effect Transistor, 192A I(D), 100V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

IHS

Mosfet, N-Ch, 100V, 192A, To-263Ab; Transistor Polarity:N Channel; Continuous Drain Current Id:192A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.0035Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes |Infineon IRF100S201

Newark

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon