备用零件
Price @ 1000
$ 1.14
$ 1.22
Stock
132,450
274,861
Authorized Distributors
3
3
Mount
Surface Mount
Surface Mount
Case/Package
DPAK
DPAK
Drain to Source Voltage (Vdss)
40 V
40 V
Continuous Drain Current (ID)
100 A
100 A
Threshold Voltage
-
-
Rds On Max
1.98 mΩ
1.98 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
163 W
163 W
Input Capacitance
5.171 nF
5.171 nF
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-05-06
Lifecycle StatusObsolete (Last Updated: 2 weeks ago)
LTB Date2021-08-15
LTD Date2022-02-15
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描述
由其分销商提供的 Infineon AUIRFR8405 的描述。
Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a D-Pak Package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 100A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified | Target Applications: Brushed Motor Drive; Brushless Motor Drive; DC-DC; Electric Power Steering; Glowplug; Relay Replacement; Window Lifter
MOSFET, 40V, 100A, Q101, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.00165ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:163W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-252AA; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)100 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance1.65 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time51 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.171 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation163 W
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Channels1
Number of Elements1
On-State Resistance1.98 mΩ
Package Quantity3000
Power Dissipation163 W
Rds On Max1.98 mΩ
Rise Time80 ns
Turn-Off Delay Time51 ns
Turn-On Delay Time12 ns
Dimensions
Height2.39 mm
Length6.73 mm
Width6.22 mm