备用零件
Price @ 1000
$ 1.45
$ 1.349
Stock
52,481
957,982
Authorized Distributors
3
6
Mount
Through Hole
Through Hole
Case/Package
TO-220-3
TO-220AB
Drain to Source Voltage (Vdss)
75 V
75 V
Continuous Drain Current (ID)
75 A
75 A
Threshold Voltage
2 V
4 V
Rds On Max
4.5 mΩ
4.5 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
300 W
300 W
Input Capacitance
7.6 nF
7.6 nF
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-07-21
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-02-28
LTD Date2018-08-31
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描述
由其分销商提供的 Infineon AUIRFB3207 的描述。
Automotive Q101 75V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package
Trans MOSFET N-CH 75V 170A Automotive 3-Pin(3+Tab) TO-220AB Tube
HEXFET POWER MOSFET Power Field-Effect Transistor, 75A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
MOSFET,N CH,75V,75A,TO220AB; Continuous Drain Current Id:170A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.0036ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:300W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Pd:300W; Voltage Vgs Max:20V
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)75 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance4.5 mΩ
Drain to Source Voltage (Vdss)75 V
Element ConfigurationSingle
Fall Time74 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance7.6 nF
Max Operating Temperature175 °C
Max Power Dissipation300 W
Min Breakdown Voltage75 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation300 W
Rds On Max4.5 mΩ
Rise Time120 ns
Threshold Voltage2 V
Turn-Off Delay Time68 ns
Turn-On Delay Time29 ns
Dimensions
Height16.51 mm
Length10.66 mm
Width4.82 mm