价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rutronik | TMOSP10301 | 200 | 50 | 22h | ||||||||
| Rochester Electronics | IPA032N06N3GXKSA1 | 97 | 15h | |||||||||
| Future Electronics | IPA032N06N3GXKSA1 | 0 | 500 | Tube | ||||||||
| Avnet | IPA032N06N3GXKSA1 | 0 | 500 | 3d | ||||||||
| Arrow Electronics | IPA032N06N3GXKSA1 | 0 | 500 |
供应链
Country of OriginAustria, Mainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-05-10
Lifecycle StatusEOL (Last Updated: 2 weeks ago)
LTB Date2026-09-30
LTD Date2027-03-31
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描述
由其分销商提供的 Infineon IPA032N06N3GXKSA1 的描述。
Power MOSFET, N Channel, 60 V, 84 A, 2.6 Milliohms, TO-220, 3 Pins, Through Hole
Trans MOSFET N-CH 60V 84A 3-Pin TO-220FP Tube
84 A 60 V 0.0032 ohm N-CHANNEL Si POWER MOSFET TO-220AB
OPTIMOS 3 POWER-TRANSISTOR Power Field-Effect Transistor, 84A I(D), 60V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
OptiMOS™ 60 V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger.In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter.
MOSFET, N-CH, 60V, 84A, TO-220-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 84A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0026ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Pow
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)84 A
Drain to Source Resistance3.2 mΩ
Drain to Source Voltage (Vdss)60 V
Fall Time20 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance10 nF
Max Dual Supply Voltage60 V
Max Operating Temperature175 °C
Max Power Dissipation41 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance3.2 mΩ
Package Quantity500
Power Dissipation41 W
Rds On Max3.2 mΩ
Rise Time120 ns
Turn-Off Delay Time62 ns
Turn-On Delay Time35 ns