备用零件
Price @ 1000
$ 0.342
$ 0.703
Stock
62,775
16,885
Authorized Distributors
1
2
Mount
-
-
Case/Package
-
-
Drain to Source Voltage (Vdss)
-
-
Continuous Drain Current (ID)
56 A
56 A
Threshold Voltage
-
-
Rds On Max
-
-
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
105 W
105 W
Input Capacitance
-
-
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1998-05-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2005-03-25
LTD Date2005-09-25
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描述
由其分销商提供的 onsemi HUF76129S3ST 的描述。
Not available to order 56a, 30V N-Ch MOSFET
56 A 30 V 0.023 ohm N-CHANNEL Si POWER MOSFET TO-263AB
Power Field-Effect Transistor, 56A I(D), 30V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
N-CHANNEL POWER MOSFET
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Number of Terminals2
Technical
Continuous Drain Current (ID)56 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance23 mΩ
Element ConfigurationSingle
Fall Time35 ns
Gate to Source Voltage (Vgs)20 V
Max Operating Temperature150 °C
Max Power Dissipation105 W
Min Breakdown Voltage30 V
Min Operating Temperature-40 °C
Number of Elements1
Power Dissipation105 W
Rise Time30 ns
Turn-Off Delay Time68 ns