价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | NTP5864NG | 3,921 | 461 | |||||||||
| Rochester Electronics | NTP5864NG | 3,921 | 11h | |||||||||
| RS (Formerly Allied Electronics) | NTP5864NG | 0 | 20 | Bulk | 3h | |||||||
| Win Source | WS-NTP5864NG | 5,000 | 60 | 12h | ||||||||
| Worldway Electronics | NTP5864NG | 22,260 | 7 | Tube | 11h |
供应链
Lifecycle StatusObsolete (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
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描述
由其分销商提供的 onsemi NTP5864NG 的描述。
NTP5864NG N-channel MOSFET Transistor; 63 A; 60 V; 3-Pin TO-220
Trans MOSFET N-CH 60V 63A 3-Pin(3+Tab) TO-220AB Rail
63 A 60 V 0.0124 ohm N-CHANNEL Si POWER MOSFET TO-220AB
Power MOSFET 60V, 63A, 12.4mΩ G
Power Field-Effect Transistor, 63A I(D), 60V, 0.0124ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Mosfet, N-Ch, 60V, 63A, To-220; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:63A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Product Range:- Rohs Compliant: Yes |Onsemi NTP5864NG
MOSFET, N-CH, 60V, 63A, TO-220AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 63A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0102ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 107W; Transistor Case Style: TO-220AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: Lead (27-Jun-2018)
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-220-3
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)63 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance12.4 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time4.6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.68 nF
Max Operating Temperature175 °C
Max Power Dissipation107 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation107 W
Rds On Max12.4 mΩ
Rise Time6.4 ns
Schedule B8541290080
Turn-Off Delay Time18 ns
Turn-On Delay Time10 ns
Dimensions
Height4.82 mm
Length10.28 mm
Width15.75 mm