onsemi FQD2N90TF

N-Channel QFET® MOSFET 900V, 1.7A, 7.2Ω
$ 0.581
Obsolete
制造商页面数据表

价格与库存

数据表和文档

下载 onsemi FQD2N90TF 的数据表和制造商文档。

onsemi

Datasheet8 页12 年前
Datasheet0 页0 年前
Datasheet0 页0 年前

IHS

Fairchild Semiconductor

Mouser

库存历史记录

3 个月趋势:
+0.00%
Powered bySpectra logo

CAD 模型

从我们值得信赖的合作伙伴处下载 onsemi FQD2N90TF 符号、封装和 3D STEP 模型。

来源eCADmCAD文件
Component Search Engine
符号封装
下载
Ultra Librarian
符号封装
下载
下载 CAD 模型时，合作伙伴网站将在新标签页中打开
从 Octopart 下载 CAD 模型，即表示您同意我们的条款和条件以及隐私政策。

备用零件

此零件
备用零件
onsemiFQD2N90TF
onsemiFQD2N90TM
Price @ 1000
$ 0.581
$ 0.74
Stock
89,530
569,389
Authorized Distributors
1
6
Mount
Surface Mount
Surface Mount
Case/Package
TO-252-3
DPAK
Drain to Source Voltage (Vdss)
900 V
900 V
Continuous Drain Current (ID)
1.7 A
1.7 A
Threshold Voltage
-
-
Rds On Max
7.2 Ω
7.2 Ω
Gate to Source Voltage (Vgs)
30 V
30 V
Power Dissipation
2.5 W
2.5 W
Input Capacitance
500 pF
500 pF

供应链

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-07-13
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2011-03-02
LTD Date2011-09-02

相关零件

InfineonIPD80R2K8CEATMA1
MOSFET N-CH 800V 1.9A TO252-3 / N-Channel 800 V 1.9A (Tc) 42W (Tc) Surface Mount PG-TO252-3
详细信息
STMicroelectronicsSTD2N80K5
N-channel 800 V, 3.5 Ohm typ., 2 A Zener-protected SuperMESH(TM) 5 Power MOSFET in DPAK package
详细信息
STMicroelectronicsSTD2N95K5
N-channel 950 V, 4.2 Ohm typ., 2 A Zener-protected SuperMESH(TM) 5 Power MOSFET in DPAK package
详细信息
onsemiFCD3400N80Z
N-Channel Power MOSFET, SUPERFET® II, 800 V, 2 A, 3.4 Ω, DPAK
详细信息
InfineonIPD90R1K2C3ATMA1
Trans MOSFET N-CH 900V 5.1A 3-Pin(2+Tab) DPAK T/R
详细信息
onsemiFCD2250N80Z
N-Channel Power MOSFET, SUPERFET® II, 800 V, 2.6 A, 2.25 Ω, DPAK
详细信息

描述

由其分销商提供的 onsemi FQD2N90TF 的描述。

N-Channel QFET® MOSFET 900V, 1.7A, 7.2Ω
onsemi
Power Field-Effect Transistor, 1.7A I(D), 900V, 7.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
IHS
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:900V; Continuous Drain Current, Id:1.7A; On Resistance, Rds(on):7.2ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:5V ;RoHS Compliant: Yes
Newark
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Fairchild Semiconductor

图片

element14
Rochester Electronics

制造商别名

onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • ON SEMICONDUCTOR CORP
  • onsemi / Fairchild
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd