Infineon IPD90R1K2C3ATMA1

Trans MOSFET N-CH 900V 5.1A 3-Pin(2+Tab) DPAK T/R

Power Field-Effect Transistor, 5.1A I(D), 900V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

MOSFET, N, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.1A; Drain Source Voltage Vds: 900V; On Resistance Rds(on): 1.2ohm; Rds(on) Test Vo; Available until stocks are exhausted Alternative available

Mosfet, N Channel, 100V, 5.1A, To-252; Transistor, Polaridad:Canal N; Intensidad Drenador Continua Id:5.1A; Tensión Drenaje-Fuente Vds:900V; Resistencia De Activación Rds(On):1.2Ohm; Tensión Vgs De Medición Rds(On):10V |Infineon IPD90R1K2C3ATMA1

900V CoolMOS C3 is Infineon's third series of CoolMOS with market entry in 2001. C3 is the "working horse" of the portfolio. | Summary of Features: Low specific on-state resistance (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Consumer; PC power; Adapter; Lighting