供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2002-07-27
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2007-03-20
相关零件
International RectifierIRF5210STRL
-100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
InfineonIRFS31N20DTRLP
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.082Ohm;ID 31A;D2Pak;PD 200W;VGS +/-30V
描述
由其分销商提供的 onsemi FQB34N20TM 的描述。
Trans MOSFET N-CH 200V 31A 3-Pin(2+Tab) D2PAK T/R
3.13W 30V 60nC@ 10V 1N 200V 75m¦¸@ 10V 31A 2.4nF@ 25V TO-263 10.67mm*9.65mm*4.83mm
Power Field-Effect Transistor, 31A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
N-CHANNEL POWER MOSFET
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)31 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance75 mΩ
Element ConfigurationSingle
Fall Time115 ns
Gate to Source Voltage (Vgs)30 V
Max Operating Temperature150 °C
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation3.13 W
Rise Time280 ns
Turn-Off Delay Time125 ns
Turn-On Delay Time40 ns