onsemi FQB33N10TM

Name: onsemi FQB33N10TM
Brand: onsemi
SKU: FQB33N10TM

Transistor MOSFET N Channel 100 Volt 33 Amp 3-Pin 2+ Tab D2pak Tape And Reel

EOL

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Farnell	2	FQB33N10TM	0	1	Cut Tape	2.070*	1.798*	1.798*	1.798*	1.798*	1d
element14 APAC	2	FQB33N10TM	0	1	Cut Tape	1.730*	1.375*	1.161*	0.853*	0.814*	15h
Weyland Electronics Group Pte. Ltd.		FQB33N10TM	5,161	1	Tape & Reel	1.803	1.803	1.803	1.803	1.803	4h
Win Source		WS-FQB33N10TM	3,200	4			14.316	11.631	11.631	11.631	2h
Worldway Electronics		FQB33N10TM	12,387	7	Tape & Reel		0.323	0.313	0.296	0.296	1h

数据表和文档

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IHS

Datasheet8 页12 年前

Farnell

Components Direct

onsemi

element14 APAC

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EE Concierge	符号封装

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2000-05-24

Lifecycle StatusEOL (Last Updated: 3 days ago)

LTB Date2022-06-21

LTD Date2022-12-21

Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)

描述

由其分销商提供的 onsemi FQB33N10TM 的描述。

Transistor MOSFET N Channel 100 Volt 33 Amp 3-Pin 2+ Tab D2pak Tape And Reel

Jameco

N-Channel Power MOSFET, QFET®, 100 V, 33 A, 52 mΩ, D2PAK

onsemi

N-Channel 100 V 52 mOhm Surface Mount Mosfet - D2PAK-3

Future Electronics

Trans MOSFET N-CH 100V 33A 3-Pin(2+Tab) D2PAK T/R

Avnet

Power Field-Effect Transistor, 33A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

IHS

Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:33A; On Resistance, Rds(on):0.052ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:4V ;RoHS Compliant: Yes

Newark

MOSFET, N TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:100V; On Resistance Rds(on):40mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:127W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:33A; Package / Case:D2-PAK; Power Dissipation Pd:127W; Power Dissipation Pd:127W; Pulse Current Idm:132A; Rate of Voltage Change dv / dt:6V/ns; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V

element14 APAC

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Fairchild Semiconductor