供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2005-09-28
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
相关零件
InfineonIRFS31N20DTRLP
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.082Ohm;ID 31A;D2Pak;PD 200W;VGS +/-30V
InfineonIRFS31N20DPBF
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.082Ohm;ID 31A;D2Pak;PD 200W;VGS +/-30V
描述
由其分销商提供的 onsemi FDB33N25TM 的描述。
N-Channel Power MOSFET, UniFETTM, 250 V, 33 A, 94 mΩ, D2PAK
TRANSISTOR, MOSFET, N-CHANNEL, HIGH VOLTAGE, 250V, 33A, 94MOHM AT 10V, D2PAK
Single N-Channel 250 V 235 W 48 nC Silicon Surface Mount Mosfet - TO-263-3
Power Field-Effect Transistor, 33A I(D), 250V, 0.094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageD2PAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.31247 g
Technical
Continuous Drain Current (ID)33 A
Drain to Source Breakdown Voltage250 V
Drain to Source Resistance94 mΩ
Drain to Source Voltage (Vdss)250 V
Element ConfigurationSingle
Fall Time120 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2.135 nF
Max Operating Temperature150 °C
Max Power Dissipation235 W
Min Breakdown Voltage250 V
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Elements1
Power Dissipation235 W
Rds On Max94 mΩ
Resistance94 MΩ
Rise Time230 ns
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time75 ns
Turn-On Delay Time35 ns
Dimensions
Height4.83 mm
Length10.67 mm
Width11.33 mm