价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | ZXMP6A16DN8TA | 140 | 1 | Cut Tape | ||||||||
| DigiKey | 31-ZXMP6A16DN8TACT-ND | 310 | 1 | Cut Tape | ||||||||
| Avnet | ZXMP6A16DN8TA | 0 | 500 | 2d | ||||||||
| Future Electronics | ZXMP6A16DN8TA | 0 | 500 | Tape & Reel | ||||||||
| Arrow Electronics | ZXMP6A16DN8TA | 0 | 500 |
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2002-03-01
Lifecycle StatusProduction (Last Updated: 4 months ago)
相关零件
Diodes Inc.DMN6070SSD-13
DMN6070 Series 60 V 3.3 A 80 mOhm Dual N-Ch. Enhancement Mode Mosfet - SOIC-8
描述
由其分销商提供的 Diodes Inc. ZXMP6A16DN8TA 的描述。
Transistor MOSFET Array Dual P-CH 60V 3.9A 8-Pin SOIC T/R
Dual P-Channel 60 V 0.085 Ohm Surface Mount Enhancement Mode MOSFET - SOIC-8
2.15W 20V 1V@ 250¦ÌA 12.1nC@ 5V 2P 60V 85m¦¸@ 2.9A,10V 3.9A 1.021nF@30V SOIC-8 1.75mm
Trans MOSFET P-CH 60V 3.9A Automotive 8-Pin SOIC T/R
DUAL P-CHANNEL 60 V ENHANCEMENT MODE MOSFET Power Field-Effect Transistor, 2.9A I(D), 60V, 0.085ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Transistor Polarity:p Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:3.9A; On Resistance Rds(On):0.085Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Product Range:-Rohs Compliant: No
制造商别名
Diodes Inc. 在全球拥有多个品牌，分销商可将其用作替代名称。Diodes Inc. 也可称为以下名称：
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
技术规格
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight73.992255 mg
Technical
Continuous Drain Current (ID)2.9 A
Current Rating-3.7 A
Drain to Source Resistance85 mΩ
Drain to Source Voltage (Vdss)60 V
Fall Time10 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.021 nF
Max Operating Temperature150 °C
Max Power Dissipation2.15 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
PackagingCut Tape
Rds On Max85 mΩ
Resistance85 mΩ
Rise Time4.1 ns
Schedule B8541290080
Turn-Off Delay Time35 ns
Turn-On Delay Time3.5 ns
Voltage Rating (DC)-60 V
Dimensions
Height1.5 mm
Length5 mm
Width4 mm