供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2007-07-30
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
相关零件
Diodes Inc.DMN6070SSD-13
DMN6070 Series 60 V 3.3 A 80 mOhm Dual N-Ch. Enhancement Mode Mosfet - SOIC-8
InfineonIRF7342TRPBF
MOSFET, Power;Dual P-Ch;VDSS -55V;RDS(ON) 0.105Ohm;ID -3.4A;SO-8;PD 2W;VGS +/-20
描述
由其分销商提供的 onsemi FDS9958 的描述。
Transistor MOSFET Array Dual P-CH 60V 2.9A 8-Pin SOIC T/R
Avnet Japan
Dual P-Channel 60 V 105 mOhm PowerTrench® Mosfet - SOIC-8
Dual P-Channel PowerTrench® MOSFET -60V, -2.9A, 105mΩ
2W 20V 3V@ 250¦ÌA 23nC@ 10V 2P 60V 105m¦¸@ 2.9A,10V 2.9A 1.02nF@30V SOIC-8 4.9mm*3.9mm*1.75mm
MOSFET, DUAL P-CH, -60V, -2.9A, SOIC-8; Transistor Polarity: Dual P Channel; Continuous Drain Current Id: -2.9A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.082ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Volta
These P-channel logic level specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench®process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.These devices are well suited for portable electronics applications: load switching and power management, battery charging and protection circuits.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight187 mg
Technical
Continuous Drain Current (ID)2.9 mA
Drain to Source Breakdown Voltage-60 V
Drain to Source Resistance105 mΩ
Drain to Source Voltage (Vdss)-60 V
Element ConfigurationDual
Fall Time6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.02 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
Power Dissipation2 W
Rds On Max105 mΩ
Resistance105 MΩ
Rise Time3 ns
Schedule B8541290080
Threshold Voltage-1.6 V
Turn-Off Delay Time27 ns
Turn-On Delay Time6 ns
Dimensions
Height1.75 mm
Length4.9 mm
Width3.9 mm