Diodes Inc. FZT853TA

Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin
$ 0.456
Production

价格与库存

数据表和文档

下载 Diodes Inc. FZT853TA 的数据表和制造商文档。

IHS

Datasheet7 页9 年前
Datasheet5 页0 年前

_legacy Avnet

RS (Formerly Allied Electronics)

Diodes Inc SCT

Future Electronics

库存历史记录

3 个月趋势:
-27.51%

CAD 模型

从我们值得信赖的合作伙伴处下载 Diodes Inc. FZT853TA 符号、封装和 3D STEP 模型。

来源eCADmCAD文件
Component Search Engine
符号封装
3D下载
SnapEDA
封装
下载
下载 CAD 模型时,合作伙伴网站将在新标签页中打开
从 Octopart 下载 CAD 模型,即表示您同意我们的条款和条件以及隐私政策

备用零件

Price @ 1000
$ 0.456
$ 0.628
Stock
1,272,043
128,750
Authorized Distributors
6
3
Mount
Surface Mount
-
Case/Package
SOT-223
SOT-223
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
100 V
100 V
Max Collector Current
6 A
6 A
Transition Frequency
130 MHz
130 MHz
Collector Emitter Saturation Voltage
340 mV
340 mV
hFE Min
100
100
Power Dissipation
3 W
3 W

供应链

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.75
Introduction Date1993-01-01
Lifecycle StatusProduction (Last Updated: 4 months ago)

相关零件

Diodes Inc.DZT853-13
DZT853 Series 100 V 6 A 1 W NPN Surface Mount Transistor - SOT-223
Diodes Inc.ZXTN2011GTA
ZXTN2011G Series 100 V 6 A NPN SMT Silicon Medium Power Transistor - SOT-223
Diodes Inc.ZX5T853GTA
Bipolar (BJT) Single Transistor, NPN, 100 V, 6 A, 3 W, SOT-223, Surface Mount
onsemiNZT605
NZT Series NPN 1000 mW 110 V 1.5 A Surface Mount Darlington Transistor - SOT-223
onsemiPZTA29
Transistor, bjt, darlington, npn,800Ma I(C),sot-223 Rohs Compliant: Yes |Onsemi PZTA29
onsemiPZTA28
PZTA28 Series 1 W 80 V 0.8 A Surface Mount NPN Darlington Transistor - SOT-223

描述

由其分销商提供的 Diodes Inc. FZT853TA 的描述。

Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin
FZT853 Series NPN 6 A 100 V SMT Silicon High Performance Transistor - SOT-223
Bipolar Transistors (BJT); FZT853TA; DIODES; NPN; 4; 100 V; 6 A
Trans GP BJT NPN 100V 6A 4-Pin (3+Tab) SOT-223 T/R
SOT223 NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTOR
TRANSISTOR, NPN, REEL 1K; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:100V; Typ Gain Bandwidth ft:130MHz; Power Dissipation Pd:3W; DC Collector Current:6A; DC Current Gain hFE:200; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-223; Case Style:SOT-223; Current Ic hFE:2A; Full Power Rating Temperature:25°C; Max Current Ic:6A; Max Current Ic Continuous a:6A; Max Power Dissipation Ptot:3W; Max Voltage Vce Sat:50mV; Min Hfe:100; No. of Transistors:1; Power Dissipation:3W; Pulsed Current Icm:10A; Reel Quantity:1000; SMD Marking:FZT853; Tape Width:12mm; Termination Type:SMD; Transistor Type:Bipolar; Voltage Vcbo:200V

制造商别名

Diodes Inc. 在全球拥有多个品牌,分销商可将其用作替代名称。Diodes Inc. 也可称为以下名称:

  • Diodes Incorporated
  • DIODE
  • DII
  • DIO
  • DIODE INC
  • DC COMPONENTS
  • DIOD
  • YENYO
  • Diodes Zetex
  • MICRO COM
  • MICRO ELECTRONIC INS
  • Diodes Inc / Zetex
  • DIODE INCORPORATED
  • DIODES ZET
  • DIODSE
  • DINC
  • Diodes Inc Inc
  • DIOINC
  • FORMOSA MS
  • DIODES INC(RoHS)
  • ZETEX (DIODES INC)
  • DIODES INC/VISHAY
  • Diodes Incorporation
  • ZETEXDIODES
  • DIODES INC/VISH
  • Pericom
  • Diodes Incorporated