供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-06-03
Lifecycle StatusProduction (Last Updated: 4 months ago)
相关零件
描述
由其分销商提供的 Diodes Inc. ZXTN2011GTA 的描述。
ZXTN2011G Series 100 V 6 A NPN SMT Silicon Medium Power Transistor - SOT-223
Trans GP BJT NPN 100V 6A 3000mW 4-Pin(3+Tab) SOT-223 T/R
Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-261AA, Plastic/Epoxy, 4 Pin
General Purpose Transistors NPN Ic=6A Vceo=100V hfe=100~300 P=3W SOT223
Trans, Npn, 100V, 6A, 150Deg C, 3W Rohs Compliant: Yes |Diodes Inc. ZXTN2011GTA
100V NPN Low Saturat. Transistor SOT-223
RS APAC
制造商别名
Diodes Inc. 在全球拥有多个品牌，分销商可将其用作替代名称。Diodes Inc. 也可称为以下名称：
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
技术规格
Physical
Case/PackageSOT-223
MountSurface Mount
Number of Pins4
Number of Terminals4
Weight7.994566 mg
Technical
Collector Base Voltage (VCBO)200 V
Collector Emitter Breakdown Voltage100 V
Collector Emitter Saturation Voltage220 mV
Collector Emitter Voltage (VCEO)100 V
Continuous Collector Current6 A
Current Rating6 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)7 V
Frequency130 MHz
Gain Bandwidth Product130 MHz
hFE Min10
Max Breakdown Voltage100 V
Max Collector Current6 A
Max Frequency130 MHz
Max Operating Temperature150 °C
Max Power Dissipation3 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape
PolarityNPN
Power Dissipation3 W
Schedule B8541290080
Transition Frequency130 MHz
Voltage Rating (DC)100 V
Dimensions
Height1.65 mm
Length6.7 mm
Width3.7 mm