Power Field-Effect Transistor, 0.6A I(D), P-Channel, Metal-oxide Semiconductor FET

Ceramic Capacitor, Ceramic, 500V, 2% +Tol, 2% -Tol, C0G, 30ppm/Cel TC, 0.00002uF, Surface Mount, 1111

Ceramic Capacitor, Multilayer, Ceramic, 5% +Tol, 5% -Tol, C0G, 30ppm/Cel TC, 0.00002uF, Surface Mount, 1111

Ceramic Capacitor, Multilayer, Ceramic, 500V, 5% +Tol, 5% -Tol, C0G, 30ppm/Cel TC, 0.00002uF, Surface Mount, 1111

Ceramic Capacitor, Multilayer, Ceramic, 1500V, 5% +Tol, 5% -Tol, C0G, 30ppm/Cel TC, 0.00002uF, Surface Mount, 1111

Ceramic Capacitor, Multilayer, Ceramic, 2% +Tol, 2% -Tol, C0G, 30ppm/Cel TC, 0.00002uF, Surface Mount, 1111

Trans MOSFET P-CH 30V 0.6A 14-Pin PDIP

Quad P-ch Mosfet SIDEBRAZE-14 30V 2.0 Ohm (hots) - Lead Free Version Rohs Compliant: Yes

Power Field-Effect Transistor, 0.6A I(D), 30V, 2ohm, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET