Power Field-Effect Transistor, 1.8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

P—channelchannel, -60V, -6.5A, Rds(on), 58MΩ@10V, 70MΩ@4.5V, 20VGS(±V)；-1~-3VTH(V) ENCAPSULATION：SOT223

Trans MOSFET P-CH 60V 1.9A 4-Pin(3+Tab) SOT-223 T/R

MOSFETs; BSP171P H6327; INFINEON TECHNOLOGIES; -60 V; 20 V; 1.8 W

Power Field-Effect Transistor, 1.8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

MOSFET P-CH 60V 1.9A SOT-223 / Trans MOSFET P-CH 60V 1.9A Automotive 4-Pin(3+Tab) SOT-223 T/R

Trans MOSFET P-CH 60V 1.9A Automotive 4-Pin(3+Tab) SOT-223 T/R

60V 1 Piece P-Channel SOT223-3 MOSFETs ROHS