Vishay SI7450DP-T1-E3

SI7450DP-T1-E3 N-channel MOSFET Transistor; 3.2 A; 200 V; 8-Pin SOIC
Datasheet

Preço e estoque

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Especificações técnicas

Physical
Contact PlatingTin
MountSurface Mount
Number of Pins8
Weight506.605978 mg
Technical
Continuous Drain Current (ID)3.2 A
Current Rating5.3 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance80 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation5.2 W
Manufacturer Package IdentifierS17-0173_SINGLE
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Channels1
Number of Elements1
Power Dissipation1.9 W
Rds On Max80 mΩ
Resistance80 mΩ
Rise Time20 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time32 ns
Turn-On Delay Time14 ns
Voltage Rating (DC)20 V
Dimensions
Height1.04 mm
Length4.9 mm
Width5.89 mm

Documentos

Baixe as fichas de dados e a documentação do fabricante para Vishay SI7450DP-T1-E3.

Newark
Datasheet11 pages8 years ago
Datasheet11 pages11 years ago
Datasheet5 pages18 years ago
_legacy Avnet
Datasheet11 pages11 years ago
Datasheet5 pages15 years ago
Factory Futures
Datasheet5 pages14 years ago
Farnell
Datasheet7 pages10 years ago
Future Electronics
Datasheet11 pages10 years ago
iiiC
Datasheet11 pages11 years ago
Arrow Electronics
Datasheet11 pages11 years ago
Mouser
Datasheet5 pages16 years ago

Histórico de estoque

3 month trend:
-13.01%

Peças alternativas

Price @ 1000
$ 1.321
$ 1.306
$ 1.306
Stock
803,566
393,436
393,436
Authorized Distributors
9
12
12
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
-
SOIC
SOIC
Drain to Source Voltage (Vdss)
200 V
200 V
200 V
Continuous Drain Current (ID)
3.2 A
3.2 A
3.2 A
Threshold Voltage
2 V
4.5 V
4.5 V
Rds On Max
80 mΩ
80 mΩ
80 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
1.9 W
1.9 W
1.9 W
Input Capacitance
-
-
-

Engineering Resources

View Evaluation kits and Reference designs for Vishay SI7450DP-T1-E3.

Peças relacionadas

Descrições

Descrições de Vishay SI7450DP-T1-E3 fornecidas pelos seus distribuidores.

SI7450DP-T1-E3 N-channel MOSFET Transistor; 3.2 A; 200 V; 8-Pin SOIC
Single N-Channel 200 V 1.9 W 42 nC Silicon Surface Mount Mosfet - POWERPAK-SO-8
N CH MOSFET; Transistor Polarity:N Chann; N CH MOSFET; Transistor Polarity:N Channel; Continuous Drain Current Id:5.3A; Drain Source Voltage Vds:200V; On Resistance Rds(on):80mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:5.2W

Nomes alternativos do fabricante

Vishay possui diversas marcas em todo o mundo que os distribuidores podem usar como nomes alternativos. Vishay também pode ser conhecido(a) pelos seguintes nomes:

  • VIS
  • VISH
  • VISHAY INTERTECHNOLOGY INC
  • VISHA
  • Vishay Thin Film
  • Vishay Intertechnology
  • Vishay Semiconductors
  • VISAHY
  • VISHY
  • VISHAY INTERTECHNOLOGY ASIA PTE LTD
  • VISHAY FOIL RESISTORS
  • Vishay Intertech
  • Vishay Semiconductor Opto Division
  • VISH/IR
  • VSHY
  • VSH
  • VISHAY INTERTECHNOLOGY ASIA PT
  • VSHAY
  • VISHAY ELECTRONIC
  • Vishay General Semiconductor - Diodes Division
  • Vishay Intertechnologies
  • VISHAY AMERICAS INC
  • Vishay Semiconductor Diodes Division
  • VISHAY PRECISION GROUP
  • VISHAY AMERICAS
  • Vishay Intertechnology Inc.

Números alternativos de peça

Esta peça pode ser conhecida por estes números alternativos de peça:

  • SI7450DP-T1-E3.

Especificações técnicas

Physical
Contact PlatingTin
MountSurface Mount
Number of Pins8
Weight506.605978 mg
Technical
Continuous Drain Current (ID)3.2 A
Current Rating5.3 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance80 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation5.2 W
Manufacturer Package IdentifierS17-0173_SINGLE
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Channels1
Number of Elements1
Power Dissipation1.9 W
Rds On Max80 mΩ
Resistance80 mΩ
Rise Time20 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time32 ns
Turn-On Delay Time14 ns
Voltage Rating (DC)20 V
Dimensions
Height1.04 mm
Length4.9 mm
Width5.89 mm

Documentos

Baixe as fichas de dados e a documentação do fabricante para Vishay SI7450DP-T1-E3.

Newark
Datasheet11 pages8 years ago
Datasheet11 pages11 years ago
Datasheet5 pages18 years ago
_legacy Avnet
Datasheet11 pages11 years ago
Datasheet5 pages15 years ago
Factory Futures
Datasheet5 pages14 years ago
Farnell
Datasheet7 pages10 years ago
Future Electronics
Datasheet11 pages10 years ago
iiiC
Datasheet11 pages11 years ago
Arrow Electronics
Datasheet11 pages11 years ago
Mouser
Datasheet5 pages16 years ago

Conformidade

Classificação ambiental
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnknown
RoHSCompliant
Declarações de conformidade
Rohs Statement5 pages12 years ago