Vishay IRFD123PBF

Single N-Channel 100 V 0.27 Ohms Through Hole Power Mosfet - HVMDIP
Obsolete

Preço e estoque

Fichas técnicas e documentos

Baixe as fichas de dados e a documentação do fabricante para Vishay IRFD123PBF.

Farnell

Datasheet9 páginas4 anos atrás
Datasheet9 páginas11 anos atrás

Newark

element14 APAC

Cadeia de suprimentos

Country of OriginIsrael
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-06-09
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2024-11-18
LTD Date2025-05-18

Peças relacionadas

Single N-Channel 100 V 0.27 Ohms Through Hole Power Mosfet - HVMDIP-4
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Descrições

Descrições de Vishay IRFD123PBF fornecidas pelos seus distribuidores.

Single N-Channel 100 V 0.27 Ohms Through Hole Power Mosfet - HVMDIP
12V, N ch NexFET MOSFET™, single LGA 0.8x1.5, 19mOhm 3-PICOSTAR -55 to 150
Trans MOSFET N-CH 200V 1.3A 4-Pin HVMDIP
Power Field-Effect Transistor, 1.3A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
NCHAN, HEXDIP, 100V, 1.3A IRFD123PBF
N channel ;VBRDSS 100 V; RDSon 270 mOh
RS APAC
N CHANNEL MOSFET, 100V, 1.3A; Channel Ty; N CHANNEL MOSFET, 100V, 1.3A; Channel Type: N Channel; Drain Source Voltage Vds: 100V; Continuous Drain Current Id: 1.3A; Transistor Mounting: Through Hole; Rds(on) Test Voltage: 10V;

Nomes alternativos do fabricante

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