onsemi HGTP3N60A4D

Trans IGBT Chip N-CH 600V 17A 3-Pin(3+Tab) TO-220AB Rail
$ 1.451
Obsolete
Página do fabricanteFicha de dados

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DistributorSKUMinPkg
Verical
3
HGTP3N60A4D2.360193
Rochester ElectronicsHGTP3N60A4D25.328
7h
AvnetHGTP3N60A4D0400
1d
Win SourceWS-HGTP3N60A4D3518
8h
Worldway ElectronicsHGTP3N60A4D23.1307
7h

Fichas técnicas e documentos

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IHS

Datasheet0 páginashá 0 anos
Datasheet0 páginashá 0 anos

onsemi

Fairchild Semiconductor

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Cadeia de suprimentos

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-01-20
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2016-11-16

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Descrições

Descrições de onsemi HGTP3N60A4D fornecidas pelos seus distribuidores.

Trans IGBT Chip N-CH 600V 17A 3-Pin(3+Tab) TO-220AB Rail
Avnet
Insulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel, TO-220AB
IHS
17 A 600 V N-CHANNEL IGBT TO-220AB
Component Stockers USA
The HGTP3N60A4D combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.
Fairchild Semiconductor

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