onsemi FQPF4N90C
$ 0.811
Production
Preço e estoque
Distribuidores autorizados
Distribuidores de estoque não autorizados
Revendedores não autorizados
Histórico de estoque
Tendência de 3 meses: -28.74%
Modelos CAD
0 models available
Peças alternativas
1 peça disponível
Fichas técnicas e documentos
Baixe as fichas de dados e a documentação do fabricante para onsemi FQPF4N90C.
Peças alternativas
Esta peça
Peças alternativas
Price @ 1000
$ 0.811
$ 1.35
Stock
736,912
448,700
Authorized Distributors
4
2
Mount
Through Hole
Through Hole
Case/Package
TO-220-3
TO-220-3
Drain to Source Voltage (Vdss)
900 V
900 V
Continuous Drain Current (ID)
4 A
2.1 A
Threshold Voltage
5 V
-
Rds On Max
4.2 Ω
4.25 Ω
Gate to Source Voltage (Vgs)
30 V
30 V
Power Dissipation
47 W
43 W
Input Capacitance
960 pF
910 pF
Cadeia de suprimentos
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2003-06-30
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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Descrições
Descrições de onsemi FQPF4N90C fornecidas pelos seus distribuidores.
Power MOSFET, N-Channel, QFET®, 900 V, 4 A, 4.2 Ω, TO-220F
Single N-Channel 900 V 4.2 Ohm 22 nC 47 W DMOS Flange Mount Mosfet - TO-220F
Trans MOSFET N-CH 900V 4A 3-Pin(3+Tab) TO-220F Tube
Power Field-Effect Transistor, 4A I(D), 900V, 4.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N-CH, 900V, 4A, TO-220F-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 4A; Drain Source Voltage Vds: 900V; On Resistance Rds(on): 3.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Nomes alternativos do fabricante
onsemi possui diversas marcas em todo o mundo que os distribuidores podem usar como nomes alternativos. onsemi também pode ser conhecido(a) pelos seguintes nomes:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Histórico de estoque
Tendência de 3 meses: -28.74%
Modelos CAD
0 models available
Peças alternativas
1 peça disponível
Especificações técnicas
Physical
Case/PackageTO-220-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.27 g
Technical
Continuous Drain Current (ID)4 A
Current Rating4 A
Drain to Source Breakdown Voltage900 V
Drain to Source Resistance4.2 Ω
Drain to Source Voltage (Vdss)900 V
Element ConfigurationSingle
Fall Time35 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance960 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation47 W
Min Breakdown Voltage900 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation47 W
Rds On Max4.2 Ω
Rise Time50 ns
Schedule B8541290080
Threshold Voltage5 V
Turn-Off Delay Time40 ns
Turn-On Delay Time25 ns
Voltage Rating (DC)900 V
Dimensions
Height19.5 mm
Length10.16 mm
Width4.7 mm
Fichas técnicas e documentos
Baixe as fichas de dados e a documentação do fabricante para onsemi FQPF4N90C.
Conformidade
Classificação ambiental
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Declarações de conformidade