onsemi FQPF3N80C

Power Mosfet, N-channel, Qfet®, 800 V, 3.0 A, 4.8 Ω, TO-220F
$ 0.868
Production
Página do fabricanteFicha de dados

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Verical
8
FQPF3N80C500289
Rochester Electronics
2
FQPF3N80C191.597
4h
DigiKeyFQPF3N80C-ND1.0901Tube
NewarkFQPF3N80C0250
Onlinecomponents.comFQPF3N80C050Bulk

Fichas técnicas e documentos

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Technical Drawing1 páginas5 anos atrás

IHS

Fairchild Semiconductor

onsemi

Farnell

Histórico de estoque

Tendência de 3 meses:
+1.47%
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Peças alternativas

Esta peça
Peças alternativas
onsemiFQPF3N80C
onsemiFQPF3N80CYDTU
Price @ 1000
$ 0.868
$ 0.777
Stock
796,277
36,645
Authorized Distributors
6
2
Mount
Through Hole
Through Hole
Case/Package
TO-220-3
TO-220-3
Drain to Source Voltage (Vdss)
800 V
800 V
Continuous Drain Current (ID)
3 A
3 A
Threshold Voltage
5 V
-
Rds On Max
4.8 Ω
4.8 Ω
Gate to Source Voltage (Vgs)
30 V
30 V
Power Dissipation
39 W
39 W
Input Capacitance
705 pF
705 pF

Cadeia de suprimentos

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2003-05-21
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descrições

Descrições de onsemi FQPF3N80C fornecidas pelos seus distribuidores.

Power MOSFET, N-Channel, QFET®, 800 V, 3.0 A, 4.8 Ω, TO-220F
onsemi
In a Pack of 5, N-Channel MOSFET, 3 A, 800 V, 3-Pin TO-220F ON Semiconductor FQPF3N80C
Fly-Wing Technology
800V 3A 39W 4.8´Î@10V1.5A 5V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
Dasenic
Power Field-Effect Transistor, 3A I(D), 800V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IHS
MOSFET, N, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:800V; On Resistance Rds(on):4.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:39W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:3A; No. of Transistors:1; Package / Case:TO-220F; Power Dissipation Pd:39W; Power Dissipation Pd:39W; Pulse Current Idm:12A; Termination Type:Through Hole; Voltage Vds Typ:800V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V
element14 APAC
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Fairchild Semiconductor

Imagens

RS
TME
Farnell
South Microelectronics
iiiC
iiiC
LZChips
Rochester Electronics
Newark

Nomes alternativos do fabricante

onsemi possui diversas marcas em todo o mundo que os distribuidores podem usar como nomes alternativos. onsemi também pode ser conhecido(a) pelos seguintes nomes:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • ON SEMICONDUCTOR CORP
  • onsemi / Fairchild
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd

Números alternativos de peça

Esta peça pode ser conhecida por estes números alternativos de peça:

  • FQPF-3N80C
  • FQPF3N80C.