onsemi FQP10N60C

Trans MOSFET N-CH 600V 9.5A 3-Pin (3+Tab) TO-220 Rail
$ 1.294
Obsolete
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DistributorSKUMinPkg
VericalFQP10N60C244216
Rochester ElectronicsFQP10N60C244
2h
FarnellFQP10N60C01
1d
element14 APACFQP10N60C01
15h
Win SourceWS-FQP10N60C44895
3h

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IHS

Datasheet10 páginas12 anos atrás
Datasheet0 páginashá 0 anos

element14 APAC

onsemi

Arrow Electronics

Farnell

Histórico de estoque

Tendência de 3 meses:
Restocked
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Cadeia de suprimentos

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2003-05-21
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2011-12-13
LTD Date2012-06-13

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Descrições

Descrições de onsemi FQP10N60C fornecidas pelos seus distribuidores.

Trans MOSFET N-CH 600V 9.5A 3-Pin (3+Tab) TO-220 Rail
Verical
N-Channel QFET® MOSFET 600V, 9.5A, 730mΩ
onsemi
Power Field-Effect Transistor, 9.5A I(D), 600V, 0.73ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IHS
MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:9.5A; Resistance, Rds On:0.6ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220; Termination Type:Through Hole; Operating Temperature Range:-55°C to +150°C; Current, Idm Pulse:38A; External Length / Height:4.83mm; No. of Pins:3; Power Dissipation:156W; Power, Pd:156W; Resistance, Rds on Max:0.73ohm; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:600V; Voltage, Vgs th Max:4V; Width, External:10.67mm
Farnell
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to mini-mize on-state resistance, provide superior switching perfor-mance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high effi-ciency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Fairchild Semiconductor

Imagens

Farnell
iiiC
South Microelectronics
Rochester Electronics

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