onsemi FCB20N60TM
$ 2.61
Production
Preço e estoque
Distribuidores autorizados
Distribuidores de estoque não autorizados
Revendedores não autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | FCB20N60TMCT-ND | 1.290 | 1 | Cut Tape | ||||||||
| Flip Electronics | FCB20N60TM | 7.200 | 6d | |||||||||
| Newark | FCB20N60TM | 0 | 800 | Cut Tape | ||||||||
| Onlinecomponents.com | FCB20N60TM | 0 | 10 | Bulk | ||||||||
| Avnet | FCB20N60TM | 0 | 800 | 16h |
Histórico de estoque
Tendência de 3 meses: -25.90%
Modelos CAD
Baixe o símbolo, a pegada e o 3D STEP
Peças alternativas
1 peça disponível
Modelos CAD
Baixe o símbolo, a pegada e os modelos 3D STEP de onsemi FCB20N60TM direto dos nossos confiáveis parceiros.
| FONTE | eCAD | mCAD | ARQUIVOS |
|---|---|---|---|
 EE Concierge | SímboloPegada | ||
 SnapEDA | Pegada | Baixar |
O site do parceiro será aberto em uma nova aba ao baixar os seus modelos CAD
Ao baixar os modelos CAD do Octopart, você concorda com nossos Termos e Condições e Política de Privacidade.
Peças alternativas
Esta peça
Peças alternativas
Price @ 1000
$ 2.61
$ 2.625
$ 2.625
Stock
240,791
217,021
217,021
Authorized Distributors
6
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
600 V
600 V
600 V
Continuous Drain Current (ID)
20 A
20 A
20 A
Threshold Voltage
5 V
-
-
Rds On Max
190 mΩ
190 mΩ
190 mΩ
Gate to Source Voltage (Vgs)
30 V
30 V
30 V
Power Dissipation
208 W
208 W
208 W
Input Capacitance
3.08 nF
3.08 nF
3.08 nF
Cadeia de suprimentos
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2005-02-04
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Peças relacionadas
STMicroelectronicsSTB25NM60ND
Mosfet Transistor, N Channel, 21 A, 600 V, 0.13 Ohm, 10 V, 4 V Rohs Compliant: Yes
STMicroelectronicsSTB23NM60ND
N-channel 600 V, 0.150 Ohm, 19.5 A, FDmesh(TM) II Power MOSFET (with fast diode) D2PAK
VishaySIHB22N60E-GE3
MOSFET, N CH, 600V, 21A, D2PAK; Transistor Polarity:N Channel; Continuous Drain
STMicroelectronicsSTB24N60M2
N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh M2 Power MOSFET in D2PAK package
VishaySIHB24N65E-GE3
E-Series N-Channel 650 V 0.145 O 122 nC Surface Mount Power Mosfet - D2PAK
Descrições
Descrições de onsemi FCB20N60TM fornecidas pelos seus distribuidores.
N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 20 A, 190 mΩ, D2PAK
MOSFET N-CH 600V 20A D2PAK / Trans MOSFET N-CH 600V 20A 3-Pin(2+Tab) D2PAK T/R
Power MOSFET, N Channel, 600 V, 20 A, 0.15 ohm, TO-263 (D2PAK), Surface Mount
FCB20N60 Series 600 V 20 A 190 mOhm N-Channel SuperFET® MOSFET - D2PAK-3
Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263
MOSFET, N CH, 600V, 20A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.15ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:208W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; Pulse Current Idm:60A
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
Nomes alternativos do fabricante
onsemi possui diversas marcas em todo o mundo que os distribuidores podem usar como nomes alternativos. onsemi também pode ser conhecido(a) pelos seguintes nomes:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Histórico de estoque
Tendência de 3 meses: -25.90%
Modelos CAD
Baixe o símbolo, a pegada e o 3D STEP
Peças alternativas
1 peça disponível
Especificações técnicas
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.31247 g
Technical
Continuous Drain Current (ID)20 A
Current Rating20 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance190 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time65 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance3.08 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation208 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Nominal Vgs5 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation208 W
Rds On Max190 mΩ
Resistance190 mΩ
Rise Time140 ns
Schedule B8541290080
Threshold Voltage5 V
Turn-Off Delay Time230 ns
Turn-On Delay Time62 ns
Voltage Rating (DC)600 V
Dimensions
Height5.08 mm
Conformidade
Classificação ambiental
China RoHSNon-Compliant
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant
Declarações de conformidade