Infineon IRFS3107PBF
$ 8.27
Obsolete
Preço e estoque
Distribuidores autorizados
Distribuidores de estoque não autorizados
Revendedores não autorizados
Peças alternativas
Esta peça
Peças alternativas
Price @ 1000
$ 8.27
$ 1.86
$ 1.86
Stock
111,323
257,257
257,257
Authorized Distributors
2
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
75 V
75 V
75 V
Continuous Drain Current (ID)
195 A
195 A
195 A
Threshold Voltage
2.35 V
-
-
Rds On Max
3 mΩ
3 mΩ
3 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
370 W
370 W
370 W
Input Capacitance
9.37 nF
9.37 nF
9.37 nF
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Descrições
Descrições de Infineon IRFS3107PBF fornecidas pelos seus distribuidores.
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Single N-Channel 75 V 3 mOhm 160 nC HEXFET® Power Mosfet - D2PAK
MOSFET Operating temperature: -55...+175 °C Housing type: D2PAK Polarity: N Power dissipation: 370 W
Trans MOSFET N-CH 75V 230A 3-Pin(2+Tab) D2PAK Tube
Power Field-Effect Transistor, 195A I(D), 75V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N-CH, 75V, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:230A; Drain Source Voltage Vds:75V; On Resistance Rds(on):2.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.35V; Power Dissipation Pd:370W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Capacitance Ciss Typ:9370pF; Current Id Max:230A; Package / Case:D2-PAK; Power Dissipation Pd:370W; Power Dissipation Pd:370W; Pulse Current Idm:900A; Reverse Recovery Time trr Typ:54ns; Termination Type:SMD; Voltage Vds Typ:75V; Voltage Vgs Max:2.35V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
Nomes alternativos do fabricante
Infineon possui diversas marcas em todo o mundo que os distribuidores podem usar como nomes alternativos. Infineon também pode ser conhecido(a) pelos seguintes nomes:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Especificações técnicas
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)195 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance3 mΩ
Drain to Source Voltage (Vdss)75 V
Dual Supply Voltage75 V
Element ConfigurationSingle
Fall Time100 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance9.37 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation370 W
Min Breakdown Voltage75 V
Min Operating Temperature-55 °C
Nominal Vgs2.35 V
Number of Channels1
Number of Elements1
On-State Resistance3 mΩ
Package Quantity1000
Power Dissipation370 W
Rds On Max3 mΩ
Reverse Recovery Time54 ns
Rise Time110 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage2.35 V
Turn-Off Delay Time99 ns
Turn-On Delay Time19 ns
Dimensions
Height5.084 mm
Length10.668 mm
Width9.65 mm
Conformidade
Classificação ambiental
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declarações de conformidade