Infineon IRFS3006PBF
$ 5.19
Obsolete
Preço e estoque
Distribuidores autorizados
Distribuidores de estoque não autorizados
Revendedores não autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRFS3006PBF | 0 | 200 | Bulk | 9h | |||||||
| Farnell | IRFS3006PBF | 0 | 1 | 3h | ||||||||
| Microchip USA | IRFS3006PBF | 127 | 150 | Tube | 9h | |||||||
| Win Source | WS-IRFS3006PBF | 100 | 50 | 18h | ||||||||
| Worldway Electronics | IRFS3006PBF | 19.098 | 7 | Tube | 17h |
Peças alternativas
Esta peça
Peças alternativas
Price @ 1000
$ 5.19
$ 1.76
Stock
65,725
1,173,698
Authorized Distributors
2
6
Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
60 V
60 V
Continuous Drain Current (ID)
195 A
195 A
Threshold Voltage
4 V
-
Rds On Max
2.5 mΩ
2.5 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
375 W
375 W
Input Capacitance
8.97 nF
8.97 nF
Peças relacionadas
Descrições
Descrições de Infineon IRFS3006PBF fornecidas pelos seus distribuidores.
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Single N-Channel 60 V 2.6 mOhm 160 nC HEXFET® Power Mosfet - D2PAK
MOSFET Operating temperature: -55...175 °C Housing type: D2PAK Polarity: N Power dissipation: 375 W
Trans MOSFET N-CH 60V 270A 3-Pin(2+Tab) D2PAK Tube
Power Field-Effect Transistor, 195A I(D), 60V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N-CH, 60V, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:270A; Drain Source Voltage Vds:60V; On Resistance Rds(on):2mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:375W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Capacitance Ciss Typ:8970pF; Current Id Max:270A; Package / Case:D2-PAK; Power Dissipation Pd:375W; Power Dissipation Pd:375W; Pulse Current Idm:1080A; Reverse Recovery Time trr Typ:44ns; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
Nomes alternativos do fabricante
Infineon possui diversas marcas em todo o mundo que os distribuidores podem usar como nomes alternativos. Infineon também pode ser conhecido(a) pelos seguintes nomes:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Especificações técnicas
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)195 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance2.5 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time189 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance8.97 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation375 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance2.5 mΩ
Package Quantity1000
Power Dissipation375 W
Rds On Max2.5 mΩ
Rise Time182 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time118 ns
Turn-On Delay Time16 ns
Dimensions
Height5.084 mm
Length10.668 mm
Width9.65 mm
Conformidade
Classificação ambiental
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declarações de conformidade