Infineon IRF6629TR1PBF

Trans MOSFET N-CH 25V 29A 7-Pin Direct-FET MX T/R
$ 3.01
Obsolete

Preço e estoque

Fichas técnicas e documentos

Baixe as fichas de dados e a documentação do fabricante para Infineon IRF6629TR1PBF.

IHS

Datasheet10 páginas19 anos atrás

DigiKey

Newark

Cadeia de suprimentos

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-07-11
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2014-06-20
LTD Date2014-12-20

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Descrições

Descrições de Infineon IRF6629TR1PBF fornecidas pelos seus distribuidores.

Trans MOSFET N-CH 25V 29A 7-Pin Direct-FET MX T/R
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:25V; Continuous Drain Current, Id:23A; On Resistance, Rds(on):2.1mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DirectFET MX ;RoHS Compliant: Yes
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 180 amperes optimized with low on resistance for applications such as active OR'ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number
MOSFET, N, DIRECTFET, MX; Transistor Polarity:N Channel; Continuous Drain Current Id:29A; Drain Source Voltage Vds:25V; On Resistance Rds(on):2.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Transistor Case Style:MX; No. of Pins:5; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:1170mJ; Base Number:6629; Cont Current Id @ 70°C:23; Current Id Max:23A; Fall Time tf:7.4ns; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-40°C; Package / Case:MX; Power Dissipation Pd:2.8mW; Pulse Current Idm:230A; Rise Time:67ns; Storage Temperature Max:150°C; Storage Temperature Min:-40°C; Termination Type:SMD; Voltage Vds:25V; Voltage Vds Typ:25V; Voltage Vgs Max:1.8V; Voltage Vgs Rds on Measurement:10V

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Números alternativos de peça

Esta peça pode ser conhecida por estes números alternativos de peça:

  • IRF6629TR1 PBF