Infineon IRF6614TRPBF
Obsolete
Preço e estoque
Distribuidores autorizados
Distribuidores de estoque não autorizados
Revendedores não autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRF6614TRPBF | 0 | 4800 | Bulk | 1d | |||||||
| Farnell | IRF6614TRPBF | 0 | 1 | Cut Tape | 17h | |||||||
| Microchip USA | IRF6614TRPBF | 271 | 300 | 5d | ||||||||
| Win Source | WS-IRF6614TRPBF | 23.111 | 3 | 19h | ||||||||
| Worldway Electronics | IRF6614 | 16.063 | 7 | Tape & Reel | 17h |
Peças alternativas
Esta peça
Peças alternativas
Price @ 1000
$ 2.36
Stock
332,564
35,704
Authorized Distributors
2
2
Mount
Surface Mount
Surface Mount
Case/Package
-
-
Drain to Source Voltage (Vdss)
40 V
40 V
Continuous Drain Current (ID)
12.7 A
12.7 A
Threshold Voltage
1.8 V
1.8 V
Rds On Max
8.3 mΩ
8.3 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
2.1 W
-
Input Capacitance
2.56 nF
2.56 nF
Cadeia de suprimentos
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-11-08
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2023-05-15
LTD Date2023-11-15
Peças relacionadas
VishaySQJ858AEP-T1_GE3
MOSFET N-CH 40V 58A / Trans MOSFET N-CH 40V 58A Automotive 5-Pin(4+Tab) PowerPAK SO EP T/R
InfineonAUIRFR3504
Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a D-Pak Package, DPAK-3, RoHS
InfineonBSC886N03LSGATMA1
Infineon Technologies N channel OptiMOS3 power MOSFET, 30 V, 13 A, TDSON-8, BSC886N03LSGATMA1
InfineonIRFHM8329TRPBF
Single N-Channel 30 V 6.1 mOhm 26 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm
Descrições
Descrições de Infineon IRF6614TRPBF fornecidas pelos seus distribuidores.
Single N-Channel 40 V 8.3 mOhm 29 nC HEXFET® Power Mosfet - DirectFET®
Trans MOSFET N-CH Si 40V 12.7A 7-Pin Direct-FET ST T/R
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:10.1A; On Resistance, Rds(on):5.9ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DirectFET ST ;RoHS Compliant: No
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Nomes alternativos do fabricante
Infineon possui diversas marcas em todo o mundo que os distribuidores podem usar como nomes alternativos. Infineon também pode ser conhecido(a) pelos seguintes nomes:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Especificações técnicas
Physical
MountSurface Mount
Number of Pins5
Number of Terminals3
Technical
Continuous Drain Current (ID)12.7 A
Current Rating12.7 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance8.3 mΩ
Drain to Source Voltage (Vdss)40 V
Fall Time3.6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.56 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation42 W
Manufacturer Package IdentifierMG-WDSON-5
Min Breakdown Voltage40 V
Min Operating Temperature-40 °C
Number of Channels1
Number of Elements1
On-State Resistance8.3 mΩ
Package Quantity4800
PackagingTape & Reel
Power Dissipation2.1 W
Rds On Max8.3 mΩ
Resistance8.3 MΩ
Rise Time27 ns
Schedule B8541290080
Threshold Voltage1.8 V
Turn-Off Delay Time18 ns
Turn-On Delay Time13 ns
Voltage Rating (DC)40 V
Dimensions
Height700 µm
Length4.826 mm
Width3.95 mm
Conformidade
Classificação ambiental
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declarações de conformidade