Infineon IRF6614TR1PBF
$ 2.36
Obsolete
Preço e estoque
Distribuidores autorizados
Distribuidores de estoque não autorizados
Revendedores não autorizados
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRF6614TR1PBF | 0 | 1K | Bulk | 1d | |||||||
| Farnell | IRF6614TR1PBF | 0 | 1 | Cut Tape | 20h | |||||||
| Component Stockers USA | IRF6614TR1PBF | 402 | >1wk | |||||||||
| Win Source | WS-IRF6614TR1PBF | 11.810 | 4 | 21h | ||||||||
| Worldway Electronics | IRF6614TR1PBF | 14.891 | 7 | Tape & Reel | 20h |
Cadeia de suprimentos
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-11-08
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2014-06-20
LTD Date2014-12-20
Peças relacionadas
VishaySQJ858AEP-T1_GE3
MOSFET N-CH 40V 58A / Trans MOSFET N-CH 40V 58A Automotive 5-Pin(4+Tab) PowerPAK SO EP T/R
InfineonIRF6721STR1PBF
Power Field-Effect Transistor, 60A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
InfineonAUIRFR3504
Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a D-Pak Package, DPAK-3, RoHS
InfineonBSC886N03LSGATMA1
Infineon Technologies N channel OptiMOS3 power MOSFET, 30 V, 13 A, TDSON-8, BSC886N03LSGATMA1
Descrições
Descrições de Infineon IRF6614TR1PBF fornecidas pelos seus distribuidores.
MOSFET N-CH 40V 12.7A DIRECTFET / Trans MOSFET N-CH Si 40V 12.7A 7-Pin Direct-FET ST T/R
MOSFET, N-Ch, VDSS 40V, RDS(ON) 5.9 mOhm, ID 12.7A, DirectFET
MOSFET N-CH 40V 12.7A DIRECTFET
Power Field-Effect Transistor, 12.7A I(D), 40V, 0.0083ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N, DIRECTFET, 40V, ST; Transistor Polarity:N Channel; Continuous Drain Current Id:12.7A; Drain Source Voltage Vds:40V; On Resistance Rds(on):5.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.1mW; Transistor Case Style:ST; No. of Pins:5; SVHC:No SVHC (18-Jun-2012); Base Number:6614; Current Id Max:10.1A; Package / Case:ST; Power Dissipation Pd:2.1mW; Pulse Current Idm:102A; SMD Marking:2.1; Termination Type:SMD; Voltage Vds:40V; Voltage Vds Typ:40V; Voltage Vgs Max:1.8V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.25V; Voltage Vgs th Min:1.35V
Nomes alternativos do fabricante
Infineon possui diversas marcas em todo o mundo que os distribuidores podem usar como nomes alternativos. Infineon também pode ser conhecido(a) pelos seguintes nomes:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Especificações técnicas
Physical
MountSurface Mount
Number of Pins5
Number of Terminals3
Technical
Continuous Drain Current (ID)12.7 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance8.3 mΩ
Drain to Source Voltage (Vdss)40 V
Dual Supply Voltage40 V
Fall Time3.6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.56 nF
Max Operating Temperature150 °C
Max Power Dissipation42 W
Min Breakdown Voltage40 V
Min Operating Temperature-40 °C
Nominal Vgs1.8 V
Number of Elements1
PackagingCut Tape
Rds On Max8.3 mΩ
Recovery Time23 ns
Rise Time27 ns
TerminationSMD/SMT
Threshold Voltage1.8 V
Turn-Off Delay Time18 ns
Turn-On Delay Time13 ns
Dimensions
Height508 µm
Length4.826 mm
Width3.95 mm
Conformidade
Classificação ambiental
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Declarações de conformidade