Infineon IRF2907ZPBF

MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 3.5Milliohms;ID 170A;TO-220AB;PD 300W;-55de

MOSFET N-CH 75V 160A TO220AB N-Channel 75 V 160A (Tc) 300W (Tc) Through Hole TO-220AB

Single N-Channel 75 V 4.5 mOhm 180 nC HEXFET® Power Mosfet - TO-220-3

75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon NChannelMOSTube, Vds=75 V, 170 A, TO-220ABencapsulation, Through hole mounting

MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 300 W

Trans MOSFET N-CH Si 75V 170A 3-Pin(3+Tab) TO-220AB Tube

Power Field-Effect Transistor, 160A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

MOSFET, N, 75V, 170A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:170A; Drain Source Voltage Vds:75V; On Resistance Rds(on):4.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:330W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-78B; Current Id Max:75A; Device Marking:IRF2907ZPBF; Package / Case:TO-220; Power Dissipation Pd:330W; Power Dissipation Pd:330W; Pulse Current Idm:680A; Termination Type:Through Hole; Voltage Vds Typ:75V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.