Infineon IRFB3077PBF

MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 2.8Milliohms;ID 210A;TO-220AB;PD 370W;-55de

Infineon Technologies N channel HEXFET power MOSFET, 75 V, 120 A, TO-220, IRFB3077PBF

Single N-Channel 75 V 3.3 mOhm 220 nC 3HEXFET® Power Mosfet - TO-220-3

75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Trans MOSFET N-CH 75V 210A 3-Pin(3+Tab) TO-220AB

MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 370 W

Power Field-Effect Transistor, 120A I(D), 75V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

N CH MOSFET, 75V, 210A, TO-220AB; Transi; Transistor Polarity:N Channel; Continuous Drain Current Id:210A; Drain Source Voltage Vds:75V; On Resistance Rds(on):3.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:370W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:240mJ; Capacitance Ciss Typ:9400pF; Cont Current Id @ 100°C:150A; Cont Current Id @ 25°C:210A; Current Id Max:210A; Package / Case:TO-220AB; Power Dissipation Pd:370W; Power Dissipation Pd:370W; Pulse Current Idm:850A; Rth:0.4; Termination Type:Through Hole; Voltage Vds:75V; Voltage Vds Typ:75V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

The IR MOSFET™ family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications. The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design. The optimized gate drive options enables designers the flexibility of selecting super, logic or normal level drives.