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Infineon IPD60R380E6ATMA2

CoolMOS E6 Power Transistor N-Channel 600V 10.6A 3-Pin TO-252
$ 0.633
Obsolete

Preço e estoque

Fichas técnicas e documentos

Baixe as fichas de dados e a documentação do fabricante para Infineon IPD60R380E6ATMA2.

IHS

Datasheet18 páginas8 anos atrás

Infineon

Histórico de estoque

Tendência de 3 meses:
+0.00%

Modelos CAD

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Peças alternativas

Price @ 1000
$ 0.633
$ 0.633
Stock
61,022
55,624
Authorized Distributors
1
1
Mount
Surface Mount
Surface Mount
Case/Package
-
TO-252-3
Drain to Source Voltage (Vdss)
600 V
600 V
Continuous Drain Current (ID)
10.6 A
10.6 A
Threshold Voltage
-
-
Rds On Max
380 mΩ
380 mΩ
Gate to Source Voltage (Vgs)
-
20 V
Power Dissipation
83 W
-
Input Capacitance
700 pF
700 pF

Cadeia de suprimentos

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2018-03-06
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2018-08-31
LTD Date2019-02-28

Descrições

Descrições de Infineon IPD60R380E6ATMA2 fornecidas pelos seus distribuidores.

CoolMOS E6 Power Transistor N-Channel 600V 10.6A 3-Pin TO-252
Trans MOSFET N-CH 600V 10.6A 3-Pin(2+Tab) DPAK T/R
83W(Tc) 3.5V@ 300¦ÌA 32nC@ 10V 1N 600V 380m¦¸@ 3.8A,10V 700pF@100V
MOSFET N-CH 600V 10.6A TO252-3
IPD60R380 - 600V COOLMOS N-CHANNEL POWER;
CoolMOS™ E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO252-3, RoHS
Infineon SCT
CoolMOS E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease-of-use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Very high commutation ruggedness; Extremely low losses due to very low Figure of Merit (R DS(ON)*Q g) and E oss); Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting

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