Infineon IKP20N60TXKSA1

600 V IGBT with anti-parallel diode in TO220 package, PG-TO220-3, RoHS

Infineon IKP20N60TXKSA1 IGBT, 41 A 600 V, 3-Pin TO-220, Through Hole

Trans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-220AB

IGBT, General Purpose, 40 A, 2.05 V, 166 W, 600 V, TO-220, 3 Pins

Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB

IGBT, N, 600V, 20A, TO-220; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:2.05V; Power Dissipation Pd:166W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:20A; Current Ic Continuous b Max:20A; Fall Time tf:42ns; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:166W; Power Dissipation Pd:166W; Power Dissipation Pd:166W; Pulsed Current Icm:60A; Rise Time:14ns; Short Circuit Withstand Time Min:5µs; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

Hard-switching 600 V, 20 A TRENCHSTOP™ IGBT3 copacked with full-rated free-wheeling diode in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.