onsemi HGTP12N60A4

600V, SMPS Series N-Channel IGBTs | IGBT 600V 54A 167W TO220AB
$ 0.702
Production
Página do fabricanteFicha de dados

Preço e estoque

Ver todas as reduções de preço
DistributorSKUMinPkg
Rochester ElectronicsHGTP12N60A4228
15h
Win SourceWS-HGTP12N60A45.2009
16h
SHENGYU ELECTRONICSHGTP12N60A410.0611
4d
AnlinkdaHGTP12N60A46.006
21h
QUARKTWIN TECHNOLOGY LTD
2
HGTP12N60A4Contato
>1wk

Fichas técnicas e documentos

Baixe as fichas de dados e a documentação do fabricante para onsemi HGTP12N60A4.

IHS

Datasheet0 páginashá 0 anos
Datasheet0 páginashá 0 anos

Farnell

Histórico de estoque

Tendência de 3 meses:
-14.29%
Powered bySpectra logo

Cadeia de suprimentos

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-05-01
Lifecycle StatusProduction (Last Updated: 2 months ago)

Peças relacionadas

STMicroelectronicsSTGP20V60F
V Series 600 V 20 A Flange Mount Trench Gate Field-Stop IGBT - TO-220
Detalhes
STMicroelectronicsSTGF10NC60KD
STGF10NC60KD Series 600 V 9 A N-Channel Power Mesh IGBT - TO-220FP
Detalhes
onsemiFGP20N6S2
Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, TO-220AB
Detalhes
onsemiFGPF7N60LSDTU
IGBT 600V 14A 45W Through Hole TO-220F
Detalhes
onsemiFGP20N6S2D
Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, TO-220AB
Detalhes
STMicroelectronicsSTGF14NC60KD
STGF14NC60KD Series 600 V 11 A Flange Mount Short-Circuit Rugged IGBT - TO-220FP
Detalhes

Descrições

Descrições de onsemi HGTP12N60A4 fornecidas pelos seus distribuidores.

600V, SMPS Series N-Channel IGBTs | IGBT 600V 54A 167W TO220AB
Win Source
Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-220AB
IHS
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:54A; Collector Emitter Saturation Voltage, Vce(sat):2.7V; Power Dissipation, Pd:167W; Package/Case:3-TO-220AB ;RoHS Compliant: Yes
Newark
IGBT, N, TO-220; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:54A; Voltage, Vce Sat Max:2.7V; Power Dissipation:167W; Case Style:TO-220AB; Termination Type:Through Hole; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:96A; No. of Pins:3; Pin Format:GCE; Power, Pd:167W; Power, Ptot:167W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall:18ns; Time, Rise:8ns; Transistors, No. of:1
Farnell

Imagens

Farnell
Rochester Electronics

Nomes alternativos do fabricante

onsemi possui diversas marcas em todo o mundo que os distribuidores podem usar como nomes alternativos. onsemi também pode ser conhecido(a) pelos seguintes nomes:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • ON SEMICONDUCTOR CORP
  • onsemi / Fairchild
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd