Infineon IDH16G65C5XKSA2

Rectifier Diode, Schottky, 1 Phase, 1 Element, 650V V(RRM), Silicon Carbide, TO-220AC

Rectifier Diode Schottky SiC 650V 16A 2-Pin(2+Tab) TO-220 Tube

SIC SCHOTTKY DIODE, 650V, 16A, TO-220; Product Range: thinQ Series; Diode Configuration: Single; Repetitive Reverse Voltage Vrrm Max: 650V; Continuous Forward Current If: 16A; Total Capacitive Charge Qc: 23nC; Diode Case Style: TO-220; No. of Pins: 2 Pin; Junction Temperature Tj Max: 175°C; Automotive Qualification Standard: -; SVHC: No SVHC (15-Jan-2019)

CoolSiC generation 5 represents Infineons leading edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Q c x V f). | Summary of Features: V br at 650V; Improved figure of merit (Q c x V f); No reverse recovery charge; Soft switching reverse recovery waveform; Temperature independent switching behavior; High operating temperature (T j max 175C); Improved surge capability; Pb-free lead plating | Benefits: Higher safety margin against overvoltage and complements CoolMOS offer; Improved efficiency over all load conditions; Increased efficiency compared to Silicon Diode alternatives; Reduced EMI compared to snappier Silicon diode reverse recovery waveform; Highly stable switching performance; Reduced cooling requirements; Reduced risks of thermal runaway; RoHS compliant; Very high quality and high volume manufacturing capability | Target Applications: Telecom/server SMPS; Solar; UPS; PC power; LED/LCD TV; Motor drives; HID lighting