Vishay SIHP20N50E-GE3
$ 1.64
Production
Inventory History
3 month trend: -30.40%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2015-01-19
Lifecycle StatusProduction (Last Updated: 5 months ago)
Related Parts
STMicroelectronicsSTP14NK50ZFP
N-Channel 500 V 380 mOhm Flange Mount SuperMESH Power Mosfet - TO-220FP
Descriptions
Descriptions of Vishay SIHP20N50E-GE3 provided by its distributors.
Trans MOSFET N-CH 500V 19A 3-Pin(3+Tab) TO-220AB
Power Field-Effect Transistor, 19A I(D), 500V, 0.184ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Transistor Polarity:N Channel
N-CH SINGLE 500V TO220AB
MOSFET, N CHANNEL, 500V, 19A, TO220AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 19A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.16ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4
Manufacturer Aliases
Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Inventory History
3 month trend: -30.40%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)19 A
Drain to Source Resistance184 mΩ
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.64 nF
Max Operating Temperature150 °C
Max Power Dissipation179 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Rds On Max184 mΩ
Rise Time27 ns
Threshold Voltage4 V
Turn-Off Delay Time48 ns
Turn-On Delay Time17 ns