Vishay IRF620
Obsolete
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1984-10-10
Lifecycle StatusObsolete (Last Updated: 9 months ago)
LTB Date2015-11-20
LTD Date2016-05-20
Descriptions
Descriptions of Vishay IRF620 provided by its distributors.
Tube Through Hole N-Channel Single Mosfet Transistor 5.2A Tc 52A 50W 13ns
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | MOSFET N-CH 200V 5.2A TO-220AB
Power Field-Effect Transistor, 5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
50W(Tc) 20V 4V@ 250µA 14nC@ 10 V 1individualNChannel 200V 800mΩ@ 3.1A,10V 260pF@25V TO-220AB Through hole mounting 9.01mm(height)
Manufacturer Aliases
Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- Vishay Techno
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.000006 g
Technical
Continuous Drain Current (ID)5 A
Current52 A
Current Rating6 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance800 mΩ
Drain to Source Voltage (Vds)200 V
Element ConfigurationSingle
Fall Time13 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance260 pF
Max Operating Temperature150 °C
Max Power Dissipation40 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation50 W
Rds On Max800 mΩ
Rise Time22 ns
Turn-Off Delay Time19 ns
Turn-On Delay Time7.2 ns
Voltage200 V
Voltage Rating (DC)200 V
Dimensions
Height9.01 mm
Length10.41 mm
Width4.7 mm