STMicroelectronics STW21N65M5
$ 3.665
Obsolete
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
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Distributor
SKU
Min
Pkg
Bulk Pricing
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STW21N65M5.
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-02-27
Lifecycle StatusObsolete (Last Updated: 2 months ago)
LTB Date2015-01-31
LTD Date2015-07-31
Related Parts
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N-channel 600 V, 0.13 Ohm typ., 21 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-247 package
STMicroelectronicsSTW26NM60N
N-channel 600 V, 0.135 Ohm typ., 20 A MDmesh(TM) II Power MOSFET in TO-247 package
STMicroelectronicsSTW28NM50N
N-channel 500 V, 0.135 Ohm typ., 21 A MDmesh(TM) II Power MOSFET in TO-247 package
Descriptions
Descriptions of STMicroelectronics STW21N65M5 provided by its distributors.
N-channel 650 V, 0.150 Ohm, 17 A MDmesh(TM) V Power MOSFET in TO-247
125W(Tc) 25V 5V@ 250¦ÌA 50nC@ 10 V 1individualNChannel 650V 190m¦¸@ 8.5A,10V 17A 1.95nF@100V TO-247-3 Through hole mounting 20.15mm(height)
Power Field-Effect Transistor, 17A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
MOSFET, N CH, 650V, 17A, TO 247; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.15ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:125W; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2012)
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Technical Specifications
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)17 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance190 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Fall Time24 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance1.95 nF
Max Operating Temperature150 °C
Max Power Dissipation125 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation125 W
Rds On Max190 mΩ
Resistance190 mΩ
Rise Time10 ns
Threshold Voltage4 V
Turn-Off Delay Time12 ns
Dimensions
Height20.15 mm
Length15.75 mm
Width5.15 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STW21N65M5.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant