STMicroelectronics STU13NM60N
$ 1.3
Obsolete
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TME | STU13NM60N | 0 | 1 | 23h | ||||||||
| Avnet | STU13NM60N | 0 | 3K | 3h | ||||||||
| Microchip USA | STU13NM60N | 254 | 3K | Tube | 7d | |||||||
| Win Source | WS-STU13NM60N | 1,080 | 30 | 2h | ||||||||
| Worldway Electronics | STU13NM60N | 12,526 | 7 | Tube | 1d |
Inventory History
3 month trend: -14.29%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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|---|---|---|---|
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Descriptions
Descriptions of STMicroelectronics STU13NM60N provided by its distributors.
N-channel 600 V, 0.28 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in IPAK package
STU13NM60N N-channel MOSFET Transistor, 11 A, 600 V, 3-Pin TO-251
N-CHANNEL 600 VOLT, 280 MILLI OHM TYP., 11 AMP MDMESH II POWER MOSFET Power Field-Effect Transistor, 11A I(D), 600V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -14.29%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)11 A
Drain to Source Resistance360 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance790 pF
Max Operating Temperature150 °C
Max Power Dissipation90 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation90 W
Rds On Max360 mΩ
Rise Time8 ns
Turn-Off Delay Time30 ns
Turn-On Delay Time3 ns
Dimensions
Height6.9 mm
Length6.6 mm
Width2.4 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant