STMicroelectronics STP32NM50N
$ 3.953
Obsolete
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STP32NM50N.
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-08-01
Lifecycle StatusObsolete (Last Updated: 1 month ago)
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Descriptions
Descriptions of STMicroelectronics STP32NM50N provided by its distributors.
N-channel 500 V, 0.1 Ohm typ., 22 A MDmesh(TM) II Power MOSFET in TO-220 package
Trans MOSFET N-CH 500V 22A 3-Pin(3+Tab) TO-220AB Tube
190W(Tc) 25V 4V@ 250µA 62.5nC@ 10 V 1individualNChannel 500V 130mΩ@ 11A,10V 22A 1.973nF@50V TO-220 Through hole mounting
MOSFET, N-CH, 500V, 22A, TO-220AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 22A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Powe
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)22 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance130 mΩ
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time23.6 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance1.973 nF
Max Operating Temperature150 °C
Max Power Dissipation190 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation190 W
Rds On Max130 mΩ
Rise Time9.5 ns
Schedule B8541290080
Turn-Off Delay Time110 ns
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STP32NM50N.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant