STMicroelectronics STP200NF04
$ 1.77
Obsolete
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STP200NF04.
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-08-09
LTD Date2019-02-09
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Descriptions
Descriptions of STMicroelectronics STP200NF04 provided by its distributors.
Transistor MOSFET N-CH 40V 120A 3-Pin (3+Tab) TO-220 Tube
STP200NF04 N-CHANNEL MOSFET TRANSISTOR, 120 A, 40 V, 3-PIN TO-220
N-CHANNEL 40V - 120A TO-220 STripFET™ II MOSFET
310W(Tc) 20V 4V@ 250¦ÌA 210nC@ 10 V 1N 40V 3.7m¦¸@ 90A,10V 120A 5.1nF@25V TO-220 4.6mm
N-Channel 40 V 3.7 mOhm Flange Mount SuperFET II Power Mosfet - TO-220
Power Field-Effect Transistor, 120A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 40V, 120A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 90A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0033ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Powe
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Technical Specifications
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)120 A
Current Rating120 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance3.7 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time120 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.1 nF
Max Operating Temperature175 °C
Max Power Dissipation310 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation310 W
Rds On Max3.7 mΩ
Rise Time320 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time140 ns
Turn-On Delay Time30 ns
Voltage Rating (DC)40 V
Dimensions
Height15.75 mm
Length10.4 mm
Width4.6 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STP200NF04.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant