STMicroelectronics STP18N65M5
N-channel 650 V, 0.198 Ohm typ., 15 A MDmesh(TM) V Power MOSFET in TO-220 package
$ 1.547
Production
Inventory History
3 month trend: +82.92%
CAD Models
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Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STP18N65M5.
CAD Models
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Descriptions
Descriptions of STMicroelectronics STP18N65M5 provided by its distributors.
N-channel 650 V, 0.198 Ohm typ., 15 A MDmesh(TM) V Power MOSFET in TO-220 package
STP18N65M5 N-CHANNEL MOSFET TRANSISTOR, 15 A, 710 V, 3-PIN TO-220
Trans MOSFET N-CH Si 650V 15A 3-Pin(3+Tab) TO-220AB Tube
Power Field-Effect Transistor, 15A I(D), 650V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
110W(Tc) 25V 5V@ 250µA 31nC@ 10 V 1individualNChannel 650V 220mΩ@ 7.5A,10V 15A 1.24nF@100V TO-220 Through hole mounting 10.4mm(Length)*4.6mm(width)
MOSFET, N-CH, 650V, 15A, TO-220AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 15A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.198ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Po
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: +82.92%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)15 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance220 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)25 V
Input Capacitance1.24 nF
Max Operating Temperature150 °C
Max Power Dissipation110 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation110 W
Rds On Max220 mΩ
Resistance220 mΩ
Turn-Off Delay Time36 ns
Turn-On Delay Time36 ns
Dimensions
Height15.75 mm
Length10.4 mm
Width4.6 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STP18N65M5.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCAffected
RoHSCompliant