STMicroelectronics STP140N8F7
$ 1.332
Production
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Inventory History
3 month trend: -8.43%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-09-18
Lifecycle StatusProduction (Last Updated: 1 month ago)
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Descriptions
Descriptions of STMicroelectronics STP140N8F7 provided by its distributors.
N-channel 80 V, 3.5 mOhm typ., 90 A STripFET F7 Power MOSFET in TO-220 package
Power MOSFET, N Channel, 80 V, 90 A, 4.3 Milliohms, TO-220, 3 Pins, Through Hole
STP140N8F7 N-CHANNEL MOSFET TRANSISTOR, 90 A, 80 V, 3-PIN TO-220
Power Field-Effect Transistor, 90A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Trans MOSFET N-CH 80V 90A 3-Pin(3+Tab) TO-220AB Tube
N-Channel 80 V 4.3 Ohm Flange Mount Power Mosfet - TO-220
STMicroelectronics NChannel EnhancedMOSTube STripFET H7series, Vds=80 V, 90 A, TO-220encapsulation, Through hole mounting, 3Pin
Mosfet, N-Ch, 80V, 90A, 200W, To-220; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:80V; On Resistance Rds(On):0.0035Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power Rohs Compliant: Yes |Stmicroelectronics STP140N8F7
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -8.43%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight329.988449 mg
Technical
Continuous Drain Current (ID)90 A
Drain to Source Breakdown Voltage80 V
Drain to Source Resistance4.3 mΩ
Drain to Source Voltage (Vdss)80 V
Element ConfigurationSingle
Fall Time44 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance6.34 nF
Max Operating Temperature175 °C
Max Power Dissipation200 W
Min Breakdown Voltage80 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation200 W
Rds On Max4.3 mΩ
Rise Time51 ns
Turn-Off Delay Time82 ns
Turn-On Delay Time26 ns
Dimensions
Height15.75 mm
Length10.4 mm
Width4.6 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant